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Non-volatile flash memory B4-Flash

04.03.2012

Japanese flash memory specialist Genusion and ROHM Group have announced that they have signed a licensing agreement. Its subject was B4-Flash flash memory technology, created by Genusion specialists.

The concluded agreement will become the basis for cooperation between the two companies in the development and mass production of B4-Flash memory chips. Genusion released its first serial products back in October last year. In fact, the development and mastering of the corresponding technological process at the ROHM facilities has already been completed.

The basis of the B4-Flash memory is the B4-HE mechanism (injection of "hot" electrons as a result of interband reverse bias tunneling), developed by Genusion specialists. This approach solves one of the main problems associated with traditional flash memory, allowing it to significantly increase its write speed.

B4-Flash technology provides not only high data transfer speed, but also high reliability. Write and erase operations are carried out in B4-Flash crystals 5-10 times faster than NOR flash memory allows. The new memory has a low cost, higher density and resistance to storing recorded information at high temperatures. B4-Flash products can also store data for 20 years at 125°C after 10 erase/write cycles. The memory capacity of the crystals is 512 Mbit and 1 Gbit.

The agreement provides for the release of systems-on-a-chip and other ICs with built-in B4-Flash memory under the trademarks ROHM and Lapis Semiconductor, which is part of the ROHM group. The partners expect that the new memory produced by ROHM will be used in car navigators and smartphones.

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Advanced SSDs from Intel 08.11.2012

Intel Corporation announced the start of deliveries of a new generation of solid state drives (Solid State Drive - SSD) - Intel SSD 335 Series. The new drives are replacing the Intel SSD 300 Series, which the company began shipping in April. Devices of the new generation are made on the basis of flash memory, made using 20-nm technology. Previous generation devices used 25nm technology.

"This is the first Intel SSD product to use 20nm NAND flash developed by the IM Flash Technologies joint venture," Intel said in a statement. The company said that the new devices use 64 Gbit (8 GB) memory chips, the start of mass production of which was announced in early December 2011.

In order to maintain the same level of reliability inherent in the previous generation of products made using 25nm technology, it was decided to use a planar cell structure and transistors with a metal gate and a dielectric with a high dielectric constant (High-K Metal Gate Stack), said vice president Intel Rob Crooke.

The Intel SSD 335 Series is equipped with a SATA 3.0 6 Gb/s interface and comes in a 2,5-inch form factor. The case thickness is 9,5 mm. The package includes an adapter for a 3,5-inch form factor.

As stated in the press service of Intel, the new devices offer best-in-class performance. They are capable of performing up to 42 I/O operations per second in the mode of reading data blocks of 4 KB and up to 52 I/O operations per second in the write mode of similar blocks. Sequential read speed is 500MB/s, write speed is 450MB/s.

According to the specification posted on the official website, the guaranteed service life of the drives is 3 years, provided that no more than 20 GB of data is written to the memory daily.
Intel drives offer the Intel SSD Toolbox software with Intel SSD Optimizer technology, which includes tools to diagnose and improve drive performance that may degrade over time due to the nature of flash memory. The solution is also compatible with the Microsoft Windows 8 operating system.

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