The new OMRON sensor recognizes the tilt direction. Free Technical Library News

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New OMRON Sensor Detects Tilt Direction

26.02.2008

OMRON engineers have expanded their line of tilt angle sensors with a miniature model that is able to detect tilt direction. The novelty in the first place will be interesting and useful for developers of portable equipment.

The new D6BN 1 is a PCB-mounted XNUMXmm sensor capable of generating a different output depending on the device's current position and allowing the system to recognize left or right tilt.

The sensor responds to movements between 40 and 80 degrees (and with special settings between 10 and 50 degrees) when moving in any direction. The D6BN-1 sensor is based on a highly reliable solid state design (which in turn uses a Hall effect chip) and features low power consumption: 10 mA.

Like all OMRON components, the new sensor is fully RoHS compliant. The device has an IP40 protection class and is capable of operating in the temperature range from -10 to 60°C. Since the new sensor uses only one Hall effect chip (instead of two in previous models), the cost of the D6BN-1 is significantly lower.

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Spin memory STT-MRAM 23.01.2015

Spin memory STT-MRAM is free from such shortcomings of flash memory as relatively low reliability and durability, as well as relatively high power consumed when writing data. It is seen as a replacement for flash memory and DRAM

The Singapore agency A*STAR (Agency for Science, Technology and Research) represented by the DSI (Data Storage Institute) and Micron Technology announced the continuation of the joint development of random access magnetic memory, which uses the effect of spin torque transfer magnetic random access memory, STT-MRAM). The original three-year cooperation agreement, signed in autumn 2011, has been extended for another three years.

A*STAR DSI capabilities and the institute's expertise in STT-MRAM helped Micron set up a research center in Singapore. At the initial stage of cooperation, the institute also shared the experience necessary for the successful manufacture of STT-MRAM chips.

Based on the successful experience of working together, the partners intend to focus on developing a low-power switching mechanism and improving the performance of STT-MRAM in the new phase. The parties hope that the cooperation will bring the new memory technology closer to commercial applications.

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Micron and A*STAR are not the only ones doing STT-MRAM development. Two years ago, Toshiba specialists managed to create an STT-MRAM memory element with the smallest power consumption in the world, and in early October of this year, TDK showed prototypes of STT-MRAM memory chips with a density of 8 Mbps. In the spring of last year, IMEC and Globalfoundries announced the expansion of cooperation in the development of STT-MRAM memory.

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