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Memory chip based on magnetoresistive structures

08.05.2007

Frcescalc Semiconductor has released the world's first magnetoresistive memory (MRAM) chip, the stand-alone MR2A16A module with 4 MB of memory.

The new type of memory has a unique set of characteristics - non-volatility with an unlimited number of cycles and high write speed. This memory technology, which uses magnetic moments to store the state of bits instead of electrical charges, has become fully commercially viable.

MRAM technology has all the necessary properties to become "universal memory", successfully combining the main advantages of various types of non-volatile and random access memory. In addition, there are a number of unique features that open up broad market opportunities for this device.

To date, the first complete product of the MRAM chip is available - MR2A16A with a memory capacity of 4 Mbps. So far, this microcircuit is produced only in the temperature range of 0...70°C. In July 2007, a chip with an extended temperature range is planned to appear. And towards the end of 2007, new MRAM memory chips should appear. Presumably, these will be 1 and 16 Mbit memory modules.

Main parameters: Non-volatile memory with practically unlimited number of read/write cycles (more than 10^16); Non-destructive read/write; Symmetrical read/write/erase cycle times: 35 ns; Bitwise erasing at up to 28 Mbps; Memory capacity: 4 Mbit; Memory organization: 256 Kbx16 bits; Data bus: 8/16 bits (configurable); Information storage time: more than 10 years; Supply voltage: 3,0...3,6 V.

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