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The magnetic moment of the muon is the fifth force of nature

24.08.2023

Scientists from Fermilab have made a sensational discovery, declaring significant deviations in the anomaly of the magnetic moment of the muon - a complex and unstable elementary particle. These observations go beyond the standard physical model, leaving science with the puzzle of the unknown effect on the muon's magnetic moment.

The muon, although it is an unstable particle, has a significant mass - 207 times heavier than an electron. Because of this mass, measurements of its magnetic moment turned out to be much more accurate and accessible for research. In contrast to the anomaly of the magnetic moment of the electron, which scientists have successfully explained through interaction with the quanta of the electromagnetic field, the anomaly of the magnetic moment of the muon poses a mystery to science.

The existing model of elementary particles and fields does not provide an explanation for such significant deviations in the magnetic moment of the muon. This may indicate that in addition to the known fields and particles, there is something unknown that has an effect on the magnetic moment of the muon. If scientists manage to measure this unknown influence with great accuracy and prove its existence, this may lead to the discovery of new forces or elementary particles, the presence of which is still unknown in modern physics.

The study was carried out as part of the Muon g-2 experiment, during which two long observation sessions at the facility at Fermilab gave a result with striking statistical significance. The obtained data allow us to state with a certainty of 5 sigma that the observed deviations are not random. This opens a new page in understanding the fundamental laws of nature and may lead to new discoveries in the world of elementary particles and fields that go beyond the standard model.

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Development of CeRAM Non-Volatile Memory 06.02.2014

An innovative non-volatile memory technology that can scale better and perform better than flash memory and traditional resistive memory (ReRAM) has caught the interest of processor architecture major ARM Holdings. CeRAM memory (Correlated electron RAM, memory with a correlated electron) is actively promoted by Symetrix. ARM, in turn, supports her research.

Symetrix, ARM, the University of Colorado and the University of Texas are involved in the CeRAM memory research project. The specific goals, duration and budget of the project were not announced, but the study participant, Professor Araujo (Araujo), noted that Symetrix will soon receive important data on CeRAM devices using an atomic force microscope, which allows you to look at details as small as 5 nm. This data will need to demonstrate the "new switching" properties of the device.

Intensive research on such technologies as ReRAM and CeRAM is explained by the fact that flash memory is approaching its technological barrier and it will be very problematic to develop devices using manufacturing processes of less than 10-20 nm. Therefore, the industry needs fundamentally new developments. As for ReRAM, researchers face many barriers in the development of this technology. Understanding the physical processes of formation and destruction of the so-called conductive threads in the insulating layer between the upper and lower electrodes in ReRAM memory has proven difficult, and without it it is difficult to move forward.

Unlike ReRAM, CeRAM is a resistive memory that uses the same transition metal oxides (TMOs) such as NiO, but does not use filaments or electroforming. Instead, CeRAM exhibits quantum effects of electron position correlation, which is where it gets its name from. In the CeRAM structure, the TMO active region is distinguished, which separates the two conductive TMO layers, while in ReRAM, the transition metal oxide occupies the entire region between the metal layers.

TMOs have incomplete 3d or 4d atomic shells that go through a metal-insulator junction. In the case of NiO, a voltage of 0,6 V is sufficient to record an isolated state and 1,2 V to record a conductive state. It does not require any thermodynamic phase transitions, as in traditional ReRAM.

The switching speed of CeRAM-memory cells can reach tens of femtoseconds, and the supply voltage during reading is only about 0,1-0,2 V. The state of the memory remains stable even when heated up to 400 degrees Celsius.

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