Phototransistors. Reference data

Encyclopedia of radio electronics and electrical engineering / Reference materials

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Phototransistor - a photosensitive semiconductor radiation detector, similar in structure to a bipolar pn-p or n-p-n transistor. Unlike a photodiode, it not only converts light radiation into an electrical signal, but also provides its amplification. The supply voltage to the device is applied r so that the collector junction is closed and the emitter junction is open. The base is most often left disabled.

Structurally, the phototransistor is made in such a way that the entire light flux entering through the input window is absorbed by the base, forming photogenerated pairs of current carriers in it. As a result, when a voltage is applied to the phototransistor, a collector current begins to flow through it.

Since the operation of the device is based on carrier diffusion, the operating frequency of phototransistors usually does not exceed several tens of kilohertz.

At present, silicon phototransistors are mainly produced commercially. But there are several types of devices made on the basis of germanium.

The high sensitivity of phototransistors, as well as their relatively low cost, make it possible to widely use these devices in control and automation systems that do not require maximum speed, in various light sensors, fire, security, etc., in photorelays, equipment for analyzing the optical properties of liquids and gases. Packageless phototransistors are used in optocouplers and hybrid microcircuits as elements of galvanic isolation.

All phototransistors below operate in the infrared (IR) region of radiation.

KTF102A, KTF102A1

Silicon plenary npn phototransistors KTF102A and KTF102A1 with a photosensitive element area of ​​0,64 mm2 are produced in a plastic case with hard tinned leads (Fig. 1 and 2, respectively).

Weight KTF102A - no more than 0,2 g; KTF102A1 - 0,1 g. For the KTF102A1 device, the emitter output is marked with a colored dot.

Phototransistors are designed to work in video recorders and other household radio-electronic equipment.

Main technical characteristics at Tacr.av = 25°С

• Collector photocurrent. mA, not less, at a collector-emitter voltage of 5 V and an illumination value with a wavelength of 0,85 μm 0,5 mW / cm2 ...... 0,95
• 0,1 mW/cm2......0,2
• Dark collector current, μA, no more, at a collector-emitter voltage of 5 8 and an ambient temperature of +25°C ...... 1
• typical value......0,1
• +55°C......10
• Saturation voltage. V. no more, with an illumination value with a wavelength of 0,85 μm 0,5 mW / cm2 with a collector photocurrent of 0,25 mA ...... 0,15
• 0,06 mW/cm2 (0,2 mA)......0,5
• The rise time of the photoresponse pulse when irradiation is applied, µs, not more, with an illumination of 0,06 mW / cm2 at a wavelength of 0,85 µm, a collector-emitter voltage of 5 V and a load resistance of 15 kOhm ...... 0,5
• typical value......0,2
• Spectral photosensitivity area, µm.....0,73...1,05
• Wavelength of the maximum spectral photosensitivity, µm......0,87

Operating limits

• The highest collector photocurrent. mA, at ambient temperature -19...+35°С......40
• +36...+55°С......5
• The highest collector-emtter voltage, V, at an ambient temperature of -10...+35°С......10
• +36...+55°С......6
• The highest dissipation power. mW. at ambient temperature -10...+35°С......30
• +36...+55°С......10
• Operating range of ambient temperature, °C......-10...+55

The volt-ampere characteristic of the phototransistor under various illumination conditions is shown in fig. 3, and a typical light one - in fig. 4. The relative spectral sensitivity of the instruments is illustrated in Fig. 5 - the ratio of the collector photocurrent at the current value of the radiation wavelength to the photocurrent at the maximum sensitivity wavelength).

On fig. 6 shows the dependence of the dark collector current on temperature.

KTF104A - KTF104V

Silicon planar npn phototransistors KTF104A, KTF104B. KTF104V with a photosensitive element area of ​​0,64 mm2 is produced in a plastic case, the same as for KTF102A (see Fig. 1). The terminals are also hard tinned, but the length of the mounting part is 2,9 mm. not 10,1 mm. Weight - no more than 0,2 g.

Phototransistors are designed for use in consumer electronic equipment.

Main technical characteristics at Tacr.av = 25°С

• Collector photocurrent, mA, not less, at a collector-emitter voltage of 8,5 V and illumination of 5 lux for KTF104A ...... 0,15
• KTF104B......0.1
• KTF104V......0,05
• Dark collector current, μA, no more, at a collector-emitter voltage of 8.5 V for KTF104A ...... 1
• typical value......0,1
• KTF104B, KTF104V......5
• typical value......0,5
• Dark collector current, μA, no more, at a collector-emitter voltage of 8,5 V and an ambient temperature of +55°C for KTF104A......10
• Area of ​​maximum spectral photosensitivity, µm......0,67..0,77
• Minimum warranty time between failures, h......15 000
• Shelf life, years ...... 8

The main parameters of phototransistors (definitions):

• integral current sensitivity - the ratio of the change in current at the output of the phototransistor to the change in the radiation flux that caused the change in the output current;
• monochromatic current sensitivity - the ratio of the change in current at the output of the phototransistor to the change in the radiation flux of a given wavelength;
• collector photocurrent - the current flowing through the phototransistor at the specified collector voltage, due to the influence of the radiation flux;
• dark collector current - the current flowing through the phototransistor at the specified collector voltage in the absence of radiation flux;
• rise or fall time of the photoresponse pulse - the time interval during which the photocurrent changes from 0,1 to 0,9 or from 0,9 to 0,1, respectively, from the steady value.

Operating limits

• The highest collector-emitter voltage. AT 12
• Ambient temperature operating range °C......-10...+55

The relative spectral photosensitivity of the KTF104A-KTF104V phototransistors is shown in fig. 7.

KTF108A

Silicon plenary npn phototransistors KTF108A with selective photosensitivity are produced in a plastic case with hard tinned leads (Fig. 8). Weight of the device - no more than 1 g.

Phototransistors are designed to work in the hitchhiking system of household video cameras and other radio-electronic equipment.

Main technical characteristics at Tacr.av = 25°С

• Collector photocurrent. mA, not less, at a collector saturation voltage of 0,4 V and an illumination of 20 mW / cmg at a wavelength of 0.85 μm ...... 0,4
• typical value......5
• Collector dark current, μA, no more, at a collector-emitter voltage of 10 V and an ambient temperature of +25°C ...... 0,025
• typical value......0,01
• +70°C......1
• Saturation voltage on the collector. V, no more, with illumination of 20 mW / cm2 at a wavelength of 0,85 μm ...... 0,4
• Area of ​​maximum spectral photosensitivity, µm.....0,76...0.96
• Minimum warranty time between failures, h......25 000
• Shelf life, years ...... 10
• Operating limits
• The highest constant collector-emitter voltage, V ...... 15
• Maximum power dissipation, mW, at ambient temperature +35°С......60
• +70°C......25
• Operating range of ambient temperature, °C......-10...+70

On fig. 9 shows a typical dependence of the dark current of KTF108A phototransistors on the collector-emitter voltage, and in fig. 10 - on temperature (the zone of technological spread is shaded).

The spectral characteristic of phototransistors is shown in Fig.11.

KTF109A

Silicon planar npn phototransistors KTF109A are produced in a plastic case with hard tinned leads (Fig. 12). Weight - no more than 0,15 g.

The devices are designed for use in hitchhiking units of tape recorders and other household equipment, as well as in burglar alarm systems, remote control and automation, in tachometers.

Main technical characteristics at Tacr.av = 25°С

• Collector photocurrent. ma. not less, at a collector-emitter voltage of 5 V and an irradiation power of 0,3 mW ...... 0,08
• typical value......0.4
• maximum value......1
• Monochromatic current sensitivity, A / W, not less, at a collector-emitter voltage of 5 V and irradiation with a wavelength of 0.83 μm ...... 0,25
• Collector dark current. μA, no more, at a collector-emitter voltage of 5 V and an ambient temperature of +25°С......0,5
• +55°C......2
• Rise time of the photoresponse pulse when irradiation is applied, µs, not more than......15
• Decay time of the photothermal pulse when irradiation is removed, µs, no more than......5
• Wavelength of the maximum spectral photosensitivity, µm......1,08
• Minimum warranty time to failure, h......20 000

Operating limits

• The highest constant collector-emitter voltage, V ...... 10
• Maximum power dissipation, mW......10
• Operating range of ambient temperature, °C......-60...+55

The dependence of the photocurrent of the collector of the KTF109A phototransistor on the irradiation power is shown in Fig. 13, and the temperature dependence of the dark current - in fig. 14 (the technological spread zone is shaded).

COF224A, COF224B

Silicon glider npn phototransistors KOF224A, KOF224B are produced in a plastic case with rigid plate tinned leads (Fig. 15). Weight - no more than 0,8 g.

The device is used as an infrared radiation receiver in a wide range of electronic equipment.

• Main technical characteristics at Tacr.av = 25°С
• Integral current sensitivity, µA/lx, not less, at a collector-emitter voltage of 5 V......0.7
• Collector dark current. µA, not more, for KOF224A......1
• KOF224B......0,1
• Rise or fall time of the photoresponse output pulse when irradiation is applied or removed, µs, no more, for KOF224A ...... 80
• KOF224B......20
• Wavelength of the maximum spectral photosensitivity, µm......0,95
• Minimum warranty time between failures, h......10 000
• Shelf life, years ...... 8

Operating limits

• The highest constant collector-emitter voltage, V ...... 5
• Operating range of ambient temperature, °C......-60...+55

FT-1K, FT-1K-01, FT-L K-02, FT-2K

Silicon plenary npn phototransistors FT-1K gr.1. FT-1K gr.2. FT-1K-01, FT-1K-02. FT-2K gr. A, FT-2K gr.B with a round photosensitive element (diameter 1,8 mm) are produced in a cylindrical metal-glass case with flexible tinned leads (Fig. 16). The entrance window is flat. Weight - no more than 0,9 g.

The collector outlet is extended or has a color mark.

The devices are designed to work as an infrared radiation detector in electronic equipment for industrial and special purposes.

Main technical characteristics at Tacr.av = 25°С

• Integral current sensitivity, μA/lx, not less, for FT-1K gr. 1. FT-2K gr.A ...... 0,4
• FT-1K gr.2. FT-2K gr.B......0,2
• FT-1K-01......0.5
• FT-Zh-02......2
• Collector dark current, μA, no more, at a collector-emitter voltage of 5 V for FT-1K gr.1.FT-2K gr.A......3
• FT-1K gr.2. FT-2K gr.B......1
• ФТ-1К-01. ФТ-1К-02......0,2
• Rise or fall time of the photoresponse pulse when irradiation is applied or removed, µs, no more than......80
• Spectral photosensitivity area, µm ....0,5...1,1
• Wavelength of the maximum spectral photosensitivity, µm......0,85
• Minimum warranty time between failures, h, for FT-1K gr.1, FT-1K gr.2. FT-1K-01, FT-1K-02......2000
• FT-2K gr.A, FT-2K gr.B.....3500
• Shelf life, years, for FT-1K gr.1, FT-1K gr.2 FT-1K-01, FT-1K-02......11
• FT-2K gr.A, FT-2K gr.B......6

Operating limits

• The highest DC collector-emitter voltage. AT 5
• The highest working illumination (within 10 hours). lx......1500
• Working range of ambient temperature. °C......-60...+75

On fig. 17 shows the spectral characteristic of the photosensitivity of phototransistors of the FT-1K, FT-2K series.

FT-7B, FT-7B-01

Silicon planar n-p-n phototransistors with a round photosensitive element (diameter 1,1 mm) are produced in a cylindrical plastic case with a lens (Fig. 18). Conclusions - rigid wire tinned. Weight - no more than 0,5 g.

Phototransistors are used in optical isolation nodes, to control the light flux and in signaling systems.

Main technical characteristics at Tacr.av = 25°С

• Integral current sensitivity, μA/lm, not less, for FT-7B......0,04
• FT-7B-01......0.35
• Collector photocurrent. mA, not less than, at illuminance of 1000 lx for FT-7B......0,2
• FT-7B-01......2
• Nominal collector-emitter DC voltage. IN 20
• Collector dark current. uA. no more, at a collector-emitter voltage of 20 V ...... 0,005
• Rise or fall time of the photoresponse pulse when irradiation is applied or removed, µs, no more than......1,5
• Spectral photosensitivity area, µm.....0,4...1,1
• Wavelength of the maximum spectral photosensitivity, µm......0,85
• Shelf life, years ...... 10

Operating limits

• Limits of allowable voltage collector-emitter, V......2...30
• Limits of permissible working illumination, lux..... 1...100 000
• Operating range of ambient temperature, °C......-15...+45

FT-8

Silicon plenary npn phototransistors FT-8 with a photosensitive element area of ​​0,5 mm2 are produced in a plastic case with rigid plate tinned leads (Fig. 19). Weight - no more than 0,9 g.

They are used as receivers of infrared radiation in various electronic devices.

Main technical characteristics at Tacr.av = 25°С

• Integral current sensitivity, µA/lx, not less......2
• Collector dark current. uA. no more, at a collector-emitter voltage of 5 V and an ambient temperature of +25 ° С ...... 0,1
• +75°C......20
• Photoresponse output pulse rise time, no more, when irradiation with a wavelength of 0,9 μm is applied, a collector-emitter voltage of 5 V and a load resistance of 2 kΩ, μs ...... 20
• Spectral photosensitivity area, µm......0,5...1,1
• Wavelength of the maximum spectral photosensitivity, µm......0,9..0.95
• Minimum warranty time between failures, h......4000

Author: V. Yushin. Moscow city

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