Field-effect transistors of the KP504 series. Reference data

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Field-effect transistors of the KP504 series. Reference data

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Field-effect n-channel silicon transistors KP504A-KP504E of medium power with an insulated gate and channel enrichment are manufactured using planar epitaxial technology. The device is equipped with a built-in protective reverse-biased diode connected between the source and the drain.

Transistors are designed to work in secondary power supplies with transformerless input, in regulators, stabilizers and voltage converters with continuous and pulse control, in drive units of low-power electric motors and other household and industrial equipment.

The devices are packaged in a plastic case KT-26 (TO-92) with rigid stamped tinned leads (Fig. 1). Foreign analogue of the transistor KP504A -BSS88.

Field-effect transistors of the KP504 series

Main characteristics at Tacr.av = 25±10°C

Threshold voltage, V, at a drain current of 1 mA and a gate-connected source. . .0,6...2
Open channel resistance, Ohm, no more, with a pulse duration of not more than 300 μs and their duty cycle of at least 50, with a drain current of 0,25 A and a gate-source voltage of 4,5 V for KP504A-KP504V, KP504D, KP504E... ...8
KP504G......10
Open channel resistance, Ohm, no more, with a pulse duration of not more than 300 μs and their duty cycle of at least 50, with a drain current of 14 mA and a gate-source voltage of 1,8 V for KP504A-KP504V, KP504D, KP504E..... .15
KP504G......18
Residual drain current, µA, no more, at the maximum allowable drain-source voltage and zero gate-source voltage ...... 1
Gate leakage current, μA, no more, at zero drain-source voltage and gate-source voltage ±20 V ......±0,1
The slope of the current-voltage characteristic, A / V, not less, with a pulse duration of not more than 300 μs and a duty cycle of at least 50, with a drain-source voltage of 5 V and a drain current of 0,25 A ....... 0,14, XNUMX
Constant forward voltage of the protective diode, V, not more, with a pulse duration of not more than 300 μs and a duty cycle of at least 50, at zero gate-source voltage and a current through the diode of 0,5 A for
KP504A, KP504V-KP504D......1,3
KP504B, KP504E......1,8

Thermal resistance crystal-environment, °С/W, max, for

KP504A, KP504B......125
KP504V-KP504E......177
Capacitance* of the transistor, pF, no more, at zero gate-source voltage, drain-source voltage 25 V and frequency 1 MHz input ...... 140
weekend ...... 30
through passage......9

* Reference parameters.

Limit values

The highest drain-source voltage, V, for KP504A, KP504B, KP504D, KP504E ...... 240
KP504V......200
KP504G......250
Maximum gate-source voltage, V ...... ± 10
Maximum direct current* drain, mA, for
KP504A, KP504B......250
KP504V, KP504D, KP504E......200
KP504G......180
The highest impulse current * drain, A ...... 1
The highest constant dissipated power**, W, at an ambient temperature of not more than 25 ° C, for KP504A, KP504B ...... 1
KP504V-KP504E......0,7
The highest temperature of the crystal, ° С ...... 150
Operating temperature range of the environment, °С......-55...+125

* Provided that the limiting values of the power dissipation and the temperature of the crystal are not exceeded

** At ambient temperature Tacr.avg from +25 to +125 °C, the maximum dissipated power Рmax must be reduced in accordance with the formula Рmax = (Тcr max - Tacr.avg)/RT.cr-avg, where Тcr max is the highest temperature of the crystal ; RT.cr-sr - thermal resistance of the crystal-environment.

Permissible value of static potential - 30 V in accordance with OST 11 073.062. Operating mode and conditions for mounting transistors in equipment - according to OST 11 336.907.0.

The most important graphic typical dependences of the parameters of transistors of the KP504 series are presented below. On fig. 2, a and b show the output characteristics at two values of ambient temperature, and in fig. 3 - dependence of the drain current on the gate-source voltage. On fig. Figure 4 shows the normalized dependence of the open channel resistance of the device on temperature (RK is the ratio of the current channel resistance to the resistance at a crystal temperature of +25 °C).
Rice. 5 illustrates the temperature change of the threshold voltage, and fig. 6 - the maximum allowable constant power dissipation. An idea of how the values of the input, output and throughput capacitance of transistors change when the drain-source voltage changes is given by the graph in Fig. 7. The dependence of the slope of the current-voltage characteristic and the open channel resistance on the drain current is shown in fig. 8 and 9 respectively. The power capabilities of the built-in protective diode are shown in Fig. 10.

(click to enlarge)

Author: V.Kiselev, Minsk, Belarus

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